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Electronegativity of atoms
May/17 paper in Nature Comm. »more info

Transfer of chirality
Feb/17 Paper published in Nature Chemistry including News&Views. »more info

Towards chemical recognition of molecules
Aug/16 Paper published in ACS Nano. »more info

Odehnal award
June/16 O. Stetsovych received Odehnal award »more info

Praemium Academiae
June/16 P. Jelinek received CAS award »more info

Imaging electrostatic field
May/16 paper in Nature Comm. »more info

O. Wichterle prize
May/16 P. Hapala received O. Wichterle prize for outstanding young scientists at the AS CR. »more info

On-surface chemical synthesis
Apr/16 paper in JACS »more info

Structural and Electronic Properties of Nitrogen-Doped Graphene
Mar/16 Paper in Phys. Rev. Lett. »more info

Role of the electrostatic force in AFM images
Mar/16 Paper in Phys. Rev. Lett »more info

Charge transport between two molecules
Sep/15 Paper in Phys. Rev. Lett »more info

The best poster ECOSS-31
Sep/15 Our work has been selected as the best poster in the ECOSS-31 conference. »more info

Paper in ACS Nano
Aug/15 Novel way of B,N-co doping of graphene demonstrated. »more info

paper in PRL and Physics
Aug/15 Our work has been published in Phys. Rev. Lett highlighted as Synopsis in Physics. »more info

Paper in Nature Comm.
Jul/15 High-resolution AFM images reported at room temperature. »more info

Paper in Nano Letters
Jun/15 The current and the force used for controlled atomic switching of silicon tetramer. »more info

O. Wichterle prize
May/15 M. Ondracek received O. Wichterle prize for outstanding young scientists at the AS CR. »more info

Paper in ACS Nano

We introduce a novel procedure to prepare a well-defined single atom substitutional boron doped and boron-nitrogen co-doped epitaxial graphene grown on silicon carbide. On top of this, we provide an extensive characterization of electronic and chemical properties using different experimental techniques (atomically resolved UHV AFM and STM, XPS and NEXAFS) supported by theoretical calculations (total energy DFT and STM). We demonstrate that STM images can provide a robust chemical resolution between B and N dopant due to quantum interference effect driven by peculiar local electronic properties of N dopants. Finally, atomically resolved 3D force mapping allows us to analyze the local chemical properties of N and B dopant with respect to pristine graphene. We found distinct interaction between N,B-dopants and graphene, which is mainly caused by a weak electrostatic interaction due to charge transfer between the dopant and graphene, respectively. The presence of the weak electrostatic force can play significant role in graphene functionalization using polar molecules.

M. Telychko et al Electronic and Chemical Properties of Donor, Acceptor Centers in Graphene ACS Nano 9 (9), pp 9180–9187 (2015)