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Imaging electrostatic field
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O. Wichterle prize
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On-surface chemical synthesis
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Structural and Electronic Properties of Nitrogen-Doped Graphene
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Role of the electrostatic force in AFM images
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Charge transport between two molecules
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Paper in ACS Nano
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paper in PRL and Physics
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Paper in Nature Comm.
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Paper in Nano Letters
Jun/15 The current and the force used for controlled atomic switching of silicon tetramer. »more info

O. Wichterle prize
May/15 M. Ondracek received O. Wichterle prize for outstanding young scientists at the AS CR. »more info

Paper in Nano Letters

There is ongoing effort to develop new functional nanoscale devices. This endeavor depends strongly on our ability to fabricate nanostructures that can be reversibly switched in a controlled manner between different (logical) states. Most of the present switching mechanisms are based on the ability to manipulate atoms. Atomic switching using scanning tunneling microscopy (STM) is a well-established technique, and a few examples of atomic switching by atomic force microscopy (AFM) have also been demonstrated recently. However, the combination of these two techniques has not been explored. Here we show that simultaneous STM/AFM brings new possibilities for precise control over switching mechanisms between different states.
We show that the application of the tunneling current and the atomic force on the Si quantum dots induces two competing switching mechanisms: either a downward switching mechanism driven by tunneling current (STM) or upward switching driven by an attractive short-range force (AFM). The combination of STM and AFM allows (i) selective combination of the upward and downward switching on the same Si-QD; (ii) tuning of the upward and downward switching rate by mixing two competing mechanisms, and (iii) encoding different logical information in the Si-based structure by proper selection of the feedback conditions. In addition, we provide a detailed explanation of the underlying mechanisms by combining the experimental evidence with theoretical calculations.

see S. Yamazaki et alInterplay between switching driven by the tunneling current and atomic force of a bistable four-atom Si quantum dot by means of scanning probe microscopy Nano Letters 15 4356 - 4363(2015)

DOI: 10.1021/acs.nanolett.5b00448