Transfer of chirality
Feb/17 Paper published in Nature Chemistry including News&Views. »more info

Towards chemical recognition of molecules
Aug/16 Paper published in ACS Nano. »more info

Odehnal award
June/16 O. Stetsovych received Odehnal award »more info

Praemium Academiae
June/16 P. Jelinek received CAS award »more info

Imaging electrostatic field
May/16 paper in Nature Comm. »more info

O. Wichterle prize
May/16 P. Hapala received O. Wichterle prize for outstanding young scientists at the AS CR. »more info

On-surface chemical synthesis
Apr/16 paper in JACS »more info

Structural and Electronic Properties of Nitrogen-Doped Graphene
Mar/16 Paper in Phys. Rev. Lett. »more info

Role of the electrostatic force in AFM images
Mar/16 Paper in Phys. Rev. Lett »more info

Charge transport between two molecules
Sep/15 Paper in Phys. Rev. Lett »more info

The best poster ECOSS-31
Sep/15 Our work has been selected as the best poster in the ECOSS-31 conference. »more info

Paper in ACS Nano
Aug/15 Novel way of B,N-co doping of graphene demonstrated. »more info

paper in PRL and Physics
Aug/15 Our work has been published in Phys. Rev. Lett highlighted as Synopsis in Physics. »more info

Paper in Nature Comm.
Jul/15 High-resolution AFM images reported at room temperature. »more info

Paper in Nano Letters
Jun/15 The current and the force used for controlled atomic switching of silicon tetramer. »more info

O. Wichterle prize
May/15 M. Ondracek received O. Wichterle prize for outstanding young scientists at the AS CR. »more info

Paper in Nano Letters

There is ongoing effort to develop new functional nanoscale devices. This endeavor depends strongly on our ability to fabricate nanostructures that can be reversibly switched in a controlled manner between different (logical) states. Most of the present switching mechanisms are based on the ability to manipulate atoms. Atomic switching using scanning tunneling microscopy (STM) is a well-established technique, and a few examples of atomic switching by atomic force microscopy (AFM) have also been demonstrated recently. However, the combination of these two techniques has not been explored. Here we show that simultaneous STM/AFM brings new possibilities for precise control over switching mechanisms between different states.
We show that the application of the tunneling current and the atomic force on the Si quantum dots induces two competing switching mechanisms: either a downward switching mechanism driven by tunneling current (STM) or upward switching driven by an attractive short-range force (AFM). The combination of STM and AFM allows (i) selective combination of the upward and downward switching on the same Si-QD; (ii) tuning of the upward and downward switching rate by mixing two competing mechanisms, and (iii) encoding different logical information in the Si-based structure by proper selection of the feedback conditions. In addition, we provide a detailed explanation of the underlying mechanisms by combining the experimental evidence with theoretical calculations.

see S. Yamazaki et alInterplay between switching driven by the tunneling current and atomic force of a bistable four-atom Si quantum dot by means of scanning probe microscopy Nano Letters 15 4356 - 4363(2015)

DOI: 10.1021/acs.nanolett.5b00448